Research Area The ULSI Electrosystems Laboratory is focusing on research activities (design, fabrication and evaluation) related with CMOS integrated circuits and systems. Currently, the main research area includes the memory circuits for future challenges, the high performance analog circuitry, and the high-speed/low-power VLSI systems. ■  Memory IC Design for Future Challenges Computational memory accelerating artificial neural networks Process-in-memory macro beyond Von Neumann computing Logic-compatible gain cell DRAM Wearable platform subthreshold SRAM 4T-cell based eSRAM Sub-1V dual-boosting SRAM Bit-plate parallel FeRAM GPPG-cell based FeRAM ■  High-Performance Analog Circuits 2.4-GHz single/double-ended CMOS low noise amplifier 1.2-V complementary-transfer-path charge pump circuit 1.2-V 10-bit 100-MS/s pipelined A/D converter ■  High-Speed/Low-Power VLSI Systems Research on digitally-assisted multi-functional VLSI systems Digital IP design for mobile platform architecture Design methodology study on wireless communication SoC   Representative Chip Results ■  Logic-compatible gain cell DRAM ■  4T-cell based eSRAM ■  0.8-V dual-boosting SRAM ■  4-Mb word-plate parallel FeRAM ■  2.4-GHz double-ended CMOS low noise amplifier ■  1.2-V complementary-transfer-path charge pump circuit ■  FeRAM-embedded SoC module